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January 2012
2N7002K
N-Channel Enhancement Mode Field Effect Transistor
Features
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Pb Free/RoHS Compliant
ESD HBM=2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101
D
S
G
SOT - 23
Marking : 7K
Absolute Maximum Ratings *
T A = 25°C unless otherwise noted
Symbol
V DSS
V DGR
V GSS
Parameter
Drain-Source Voltage
Drain-Gate Voltage R GS ≤ 1.0M Ω
Gate-Source Voltage
Value
60
60
±20
Units
V
V
V
I D
Drain Current
Continuous
Pulsed
300
800
mA
T J
T STG
Operating Junction Temperature Range
Storage Temperature Range
-55 to +150
-55 to +150
° C
° C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
P D
R θ JA
Parameter
Total Device Dissipation
Derating above T A = 25°C
Thermal Resistance, Junction to Ambient *
Value
350
2.8
350
Units
mW
mW/ ° C
° C/W
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size
? 2011 Fairchild Semiconductor Corporation
2N7002K Rev. A3
1
www.fairchildsemi.com
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